GAAS INGOT, METHOD FOR MANUFACTURING GAAS INGOT, AND GAAS WAFER

摘要

The present invention provides a GaAs ingot that enables the acquisition of a low-dislocation density GaAs wafer, said GaAs wafer having a carrier concentration of 5.5×1017cm-3 or less and an average dislocation density of 500/cm2 or less, by adding thereto Si together with a small amount of In. The GaAs ingot wherein the seed side and center of the drum part thereof have each a silicon concentration of 2.0×1017 cm-3 or more and less than 1.5×1018 cm-3, an indium concentration of 1×1017 cm-3 or more and less than 6.5×1018cm-3, a carrier concentration of 5.5×1017cm-3 or less, and an average dislocation density of 500/cm2 or less.