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Compositional Dependent Amorphization in Zr Alloy Films by Means of Ni-Implantation

机译:Zr合金膜中Ni注入的成分相关非晶化

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Ni-implantation has been conducted for sputter deposited Zr alloy films to investigate compositional dependent amorphization behavior in proportion to Ni in Zr alloys. As-deposited Zr and Zr-Cu with thickness of 200 nm shows columnar hcp-Zr and nano-crystalline hcp-Zr(Cu) respectively. Implantation of 150 keV Ni~+ with the amount of 1 x 10~(17) ions/cm~2 induces amorphization of Zr and Zr(Cu) with 100 nm in thick' Critical amorphization concentration of penetrated Ni decreases for Ni-implanted Zr-Cu film to be 10 at percent Ni as comparison with that of 20 at percent Ni for Zr film. The displacement collision effect has been examined by penetration of 300 keV-Ni~+. As increasing the beam energy penetration depth increases to yield equiaxed crystalline surface and inside amorphization, which corresponding to compositional gradient of penetrated Ni. This compositional dependent amorphization via ion implantation implies that induced amorphization is attributed to chemical reaction between penetrated Ni with constituents.
机译:已经对溅射沉积的Zr合金膜进行了Ni注入,以研究与Zr合金中的Ni成比例的与成分有关的非晶化行为。厚度为200 nm的沉积Zr和Zr-Cu分别显示柱状hcp-Zr和纳米晶hcp-Zr(Cu)。以1 x 10〜(17)离子/ cm〜2的量注入150 keV Ni〜+会诱导Zr和100nm厚的Zr(Cu)非晶化'注入Ni的Zr的穿透Ni的临界非晶化浓度降低-Cu膜的Ni含量为10原子%,而Zr膜的Ni含量为20原子%。通过穿透300 keV-Ni〜+检验了位移碰撞效应。随着束能量的增加,穿透深度增加,以产生等轴晶表面和内部非晶化,这对应于穿透Ni的成分梯度。通过离子注入的这种依赖于成分的非晶化意味着诱导的非晶化归因于穿透的镍与成分之间的化学反应。

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