Interface formation and phase distribution induced by Co/SiC solid state reactions

摘要

Interface formation and phase distribution by the solid-state reactions between thin sputtered cobalt films and SiC were studied at temperatures between 1023 and 1723K for various times. The reaction with the formation of suicides and carbon was first observed above 1123K. At 1323K, and as the reaction proceeded, the initially formed Co{sub}2 Si layer converted to CoSi. The deposited cobalt thin film reacted completely with SiC after annealing at 1323 K for 0.5 h. The thermodynamically stable CoSi is the only observed silicide in the reaction up to 1723K. A reaction model and a thermodynamic argument are proposed to interpret the interface formation and phase distribution of this system.