Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method

摘要

ZnO thin films were prepared on a quartz substrate by sol-gel method and a UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact with 30 nm IrO_2 electrodes. The ZnO thin films were crystallized at various crystallized temperature (600-700 deg C) for 1 hour in pure oxygen atmosphere, and were then analyzed by X-ray diffraction (XRD) and the scanning electron microscopy (SEM) to investigate the thin film crystallized structures. From photoluminescence (PL) and I-V measurement, the 650 deg C thin film not only possessed a better crystallization but also had nanopillar structures that revealed an excellent characteristic of UV photodetector.