Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

摘要

The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO_2 electrodes. The ZnO thin films were crystallized at various temperatures (600-700 deg C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and 1-V measurements, the 650 deg C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.