Thermoelectric Thin Film Device of Cross-Plane Configuration Processed by Electrodeposition and Flip-Chip Bonding

摘要

Using electrodeposition and flip-chip bonding, a cross-plane thin film device consisting of 242 pairs of the electrodeposited n-type Bi-Te and p-type Sb-Te thin film legs was successfully fabricated. The electrodeposited Bi-Te films with the thickness of 2.5-20.2 ìm exhibited the Seebeck coefficients of-52 to -59 ìV/K,andthe power factors of 5.5-5.1 × 10~(-4)W/m-K~2. While the Seebeck coefficient of the Sb-Te film varied from 276 to 485 ìV/K, the pov/er factor waschanged from 81 × 10~(-4) to 50 × 10~(-4)W/m-K~2 with increasing the film thickness from 2.2 to 20.5 ìm. The internal resistance of the thin film device consisting of 242 pairs of the electrodeposited n-p thin film legs was measured as 3.7K?. The open-circuit voltage and the maximum output power of the thin film device were 0.294V and 5.9ìW, respectively, with the temperature difference of 22.3 K across the hot and cold ends of the thin film device.