Identification of interstitialhyphen; and vacancyhyphen;type dislocation loops in ionhyphen;implanted silicon

摘要

A quick method of distinguishing between vacancyhyphen;type and interstitialhyphen;type dislocation loops is described which is applicable to foils near 111 orientation and loops in the size range which gives rise to doublehyphen;arc contrast. This method utilizes the Kikuchi line pattern and some general rules concerning electron diffraction contrast from small loops. With this method, small prismatic loops in Asplus;hyphen;implanted silicon have been shown to be of interstitial type.