Effect of implantation temperature on dislocation loop formation and origin of 1.55-μm photoluminescence from ion-beam-synthesized FeSi_(2) precipitates in silicon

摘要

Iron implantation into Si using a metal vapor vacuum arc ion source has been performed at various temperatures to synthesize nanometer scale β-FeSi_(2) precipitates in Si. Transmission electron microscopy (TEM) results showed that for high-temperature-implanted samples, there were a large number of dislocation loops formed. For intermediate-temperature-implanted samples, only a row of dislocation loops located at the end of implantation range was observed. For low-temperature-implanted samples, however, no dislocation loops were observed at all. From the differences in the photoluminescence spectra, in conjunction with the TEM results, the origins of the photoluminescence peaks in different samples could be distinguished and identified to be from β-FeSi_(2) precipitates or from crystal defects in the samples.