High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas

摘要

In this study, we fabricated three kinds of terahertz detectors with different leakage currents to analyze the plateau-like effect. The results indicate that the platform becomes increasingly apparent with the decrease in the leakage current. The fabricated device with the lowest leakage current shows a responsivity of 4.9 kV/W and noise equivalent power (NEP) of 72 pW/ root Hz. Further, it can be used for broadband detection between 215 GHz and 232 GHz with a voltage responsivity of more than 3.4 kV/W, and the response time can be up to 8 ns. Overall, the proposed device exhibits high sensitivity, large modulation frequency, and fast response, which indicates its excellent potential for detection and imaging applications in the THz range, including the detection of the 220 GHz atmospheric window.