THREE-DIMENSIONAL MODELLING OF DOPANT TRANSPORT IN GAS AND MELT DURING FZ SILICON CRYSTAL GROWTH

Sabanskis A.; Surovovs K.; Virbulis J.

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THREE-DIMENSIONAL MODELLING OF DOPANT TRANSPORT IN GAS AND MELT DURING FZ SILICON CRYSTAL GROWTH

机译：FZ硅晶体生长过程中气体和熔体中杂质输运的三维模型

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Three-dimensional (3D) steady-state modelling of inert gas flow and dopant transport in a floating zone puller has been carried out for the first time. The obtained results are analyzed regarding their effect on heat and dopant transfer and used to specify the concentration boundary conditions for 3D transient simulations of dopant transport in liquid silicon. The calculated radial resistivity variations in the crystal were compared with experiment.

机译：首次在浮区拉拔器中进行了惰性气体流动和掺杂剂传输的三维（3D）稳态建模。分析获得的结果对它们对热量和掺杂剂转移的影响，并用于为液体硅中掺杂剂传输的3D瞬态模拟指定浓度边界条件。将晶体中计算出的径向电阻率变化与实验进行比较。

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《Magnetohydrodynamics》 |2015年第1期|共14页
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Sabanskis A.; Surovovs K.; Virbulis J.;
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正文语种 eng
中图分类流体力学;
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1. THREE-DIMENSIONAL MODELLING OF DOPANT TRANSPORT IN GAS AND MELT DURING FZ SILICON CRYSTAL GROWTH [J] . Sabanskis A., Surovovs K., Virbulis J. Magnetohydrodynamics . 2015,第1期

机译：FZ硅晶体生长过程中气体和熔体中杂质输运的三维模型
2. 3D UNSTEADY MODELLING OF THE MELT FLOW IN THE FZ SILICON CRYSTAL GROWTH PROCESS [J] . A. Muiznieks, K. Lacis, B. Nacke Magnetohydrodynamics . 2007,第3期

机译：FZ硅晶体生长过程中熔体流动的3D非稳态建模
3. 3D MATHEMATICAL MODEL SYSTEM FOR MELT HYDRODYNAMICS IN THE SILICON SINGLE CRYSTAL FZ-GROWTH PROCESS WITH ROTATING MAGNETIC FIELD [J] . K. Lads, A. Muiznieks, G. Ratnieks Magnetohydrodynamics . 2005,第2期

机译：旋转磁场下硅单晶FZ生长过程中熔体流动力学的3D数学模型系统
4. Study of silicon melt convection during the RF-FZ single crystal growth process [C] . Tetsuo Munakata, Ichiro Tanasawa International heat transfer conference;IHTC1998 . 1998

机译：RF-FZ单晶生长过程中硅熔体对流的研究
5. Microstructure control and investigation of nucleation and growth mechanism of silicon crystal grown from the hypereutectic aluminum-silicon melt. [D] . Sun, Yong-Bin. 1989

机译：过共晶铝硅熔体生长的硅晶体的微结构控制和成核及生长机理的研究。
6. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions [O] . Boris Romanyuk, Victor Melnik, Valentin Popov, 2014

机译：注入碳离子的Cz和FZ硅晶体中氧配合物的结构和电学性质
7. Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique [O] . Vegad Mitesh, Bhatt N.M. 2016

机译：Czochralski技术生长磁性硅单晶过程中零高斯平面的位置对熔体界面氧浓度的影响
8. Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt [R] . Ciszek, T. F. 1979

机译：种子上碳化硅晶体的生长，同时从熔体中拉出硅晶体

THREE-DIMENSIONAL MODELLING OF DOPANT TRANSPORT IN GAS AND MELT DURING FZ SILICON CRYSTAL GROWTH

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