Fuji Electric's Power Semiconductor Devices Aim for Higher Performance and Higher Functionality

摘要

Ever since Fuji Electric first began to manufacture selenium rectifiers in 1953, our company has continued to introduce new types of power devices, one-after-another, to the market with the silicon diode in 1959, the thrysistor in 1961, the discrete BJT (bipolar junction transistor) in 1975, the BJT module in 1980, the power MOSFET (metal oxide semiconductor field effect transistor) in 1986, the discrete IGBT (insulated gate bipolar transistor) in 1987, the IGBT module in1989, and the IGBT-IPM in 1993.