Thermal transport, thermomechanical, and dielectric properties of chalcogenide Se_(98-x)Ag_2In_x (x = 0, 2, 4, 6) system

摘要

The present work reports a detailed study of some physical properties of some novel glasses of Se_(98-x)Ag_2In_x (x = 0, 2, 4,6) system. Measurements of thermal transport properties (i.e., thermal conductivity, k, and thermal diffusivity, χ_e) have been carried out using the transient plane source technique. Specific heat measurements have been done by differential scanning calorimetry. Thermomechanical properties (i.e., Vickers hardness, H_v, and modulus of elasticity, E) have been evaluated by the indenter test. The minimal energy for formation of microvoids, E_h, and microvoids volume, V_h, of the previously mentioned glassy system are discussed in terms of microhardness, H_v. Temperature and frequency dependence of dielectric constant, ε_1, and dielectric loss, ε_2, for the same system were measured in the frequency (50 Hz-1000 kHz) and temperature (303-338 K) range. The experimental results illustrate that the values of dielectric constant, ε1, and dielectric loss, ε_2, are decreased with frequency and increased with temperature. The maximum barrier height, W_b, is calculated using the dielectric measurements according to the Guintini equation. The morphology and microstructural analysis of as-prepared alloys are confirmed by X-ray diffraction, scanning electron microscope, and transmission electron microscope.