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首页> 外文期刊>Ferroelectrics: Letters Section >Preparation and Properties of PbTiO_3/(Pb_(1-x)La_x)TiO_3/PbTiO_3 Multi-Layer Films by RF Magnetron Sputtering
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Preparation and Properties of PbTiO_3/(Pb_(1-x)La_x)TiO_3/PbTiO_3 Multi-Layer Films by RF Magnetron Sputtering

机译:射频磁控溅射制备PbTiO_3 /(Pb_(1-x)La_x)TiO_3 / PbTiO_3多层膜及其性能

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摘要

Highly (100)-oriented PbTiO_3/(Pb_(0.90)La_(0.10))Ti_(0.975)O_3/PbTiO_3 multi-layer films were prepared on the PbO_x/Pt(111)/Ti/SiO_2/Si(100) substrates at the temperature of 600 deg C by RF magnetron sputtering. The thickness of PbO_x buffer layer plays a significant role on the phase purity, and the PbTiO_3 layer plays an important role in improving the properties of the multi-layer films. Highly (100)-orientated PbTiO_3/(Pb_(0.90)La_(0.10))Ti_(0.975)O_3/PbTiO_3 multi-layer film possesses good ferroelectric properties with remnant polarization 2P_r = 44.1 mu C/cm~2. The pyroelectric coefficient of the film at room-temperature is 2.425 X 10~(-8) C/cm~2.K. The results indicated that the highly (100)-oriented PbTiO_3/(Pb_(0.90)La_(0.10)Ti_(0.975)O_3/PbTiO_3 film possesses larger remnant polarization together with larger pyroelectric coefficient at room temperature.
机译:在PbO_x / Pt(111)/ Ti / SiO_2 / Si(100)衬底上制备高度(100)取向的PbTiO_3 /(Pb_(0.90)La_(0.10))Ti_(0.975)O_3 / PbTiO_3多层膜射频磁控溅射的温度为600摄氏度。 PbO_x缓冲层的厚度对相纯度起重要作用,而PbTiO_3层对改善多层膜的性能起重要作用。高度(100)取向的PbTiO_3 /(Pb_(0.90)La_(0.10))Ti_(0.975)O_3 / PbTiO_3多层膜具有良好的铁电性能,剩余极化2P_r = 44.1μC / cm〜2。薄膜在室温下的热电系数为2.425×10〜(-8)C / cm〜2.K。结果表明,在室温下,高(100)取向的PbTiO_3 /(Pb_(0.90)La_(0.10)Ti_(0.975)O_3 / PbTiO_3膜具有较大的残余极化和较大的热电系数。

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