Ferroelectric Properties of BiFeO_3 Thin Films Prepared via a Simple Chemical Solution Deposition

摘要

Bi_(1+x)FeO_3 (BFO, x = 0,0.05,0.1,0.15) thin films are fabricated on LaNiO_3 (LNO) buffered Si substrates by using a polymeric precursor solution under appropriate crystallization condition. All films possess highly (100) preference oriented. SEM analyses show that the average grain size decreases and thin films become dense and smoother with increasing of excess Bi content. The enhancement of polarization and improvement of leakage current are observed for BFO thin films with 10% excess Bi content. It indicates that the optimized excess Bi content plays an important role in the microstructure and ferroelectric property for BFO thin films.