Low Temperature Compatible Hafnium Oxide Based Ferroelectrics

摘要

Gd:HfO2 is shown to exhibit remarkable ferroelectric properties even when annealed with a thermal budget down to 450 degrees C for 10min, which allows new integrations schemes in semiconductor fabrication. Anneals at lower thermal budget also seem to increase the phase fractions of higher symmetry phases. Two dopants reported to induce ferroelectricity in a wide concentration window are studied since also a wider range for the annealing conditions is expected. Both Sr:HfO2 and Gd:HfO2 films exhibit comparable wake-up and fatigue behavior.