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首页> 外文期刊>Ferroelectrics: Letters Section >Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO_3 Thin Films Prepared by a Diol-Based Sol-Gel Method
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Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO_3 Thin Films Prepared by a Diol-Based Sol-Gel Method

机译:Diol-based Sol-Gel法制备快速热退火LiTaO_3薄膜的漏电流机理

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摘要

LiTaO_3 thin films were deposited onto Pt(lll)/SiO_2/Si(100) substrates using the sol-gel method and rapid thermal annealed in an oxygen atmosphere with a heating rate of 600 approx 3000 deg C/min. The leakage currents of the lithium tantalite thin films were measured and its leakage current mechanism was investigated. It was found that the leakage current was affected by the interface between the Pt electrode and LiTaO_3 thin films. In the low electric field region, the leakage current was controlled by Poole-Frenkel emission. On the other hand, the mechanism can be explained by Schottky emission from the Pt electrode in the high field region.
机译:使用溶胶-凝胶法将LiTaO_3薄膜沉积到Pt(III)/ SiO_2 / Si(100)衬底上,并在氧气气氛中以600约3000℃/ min的加热速率进行快速热退火。测量了钽钽酸锂薄膜的漏电流,并研究了其漏电流机理。发现泄漏电流受Pt电极和LiTaO_3薄膜之间的界面的影响。在低电场区域,泄漏电流由Poole-Frenkel发射控制。另一方面,该机理可以通过来自高场区域中的Pt电极的肖特基发射来解释。

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