Piezoelectric and Dielectric Properties of Sputter Deposited (111), (100) and Random-Textured Pb(Zr_xTi_(1-x))O_3 (PZT) Thin Films

摘要

Highly textured PZT (111), PZT(001/100) andrandom PZT films have been grown on Pt and RuO_2 bottomelectrodes by means of an in-situ, multimagnetron reactivesputtering process with three metal targets (Pb, Zr, Ti). Theorientation was varied with the bottom electrode/PZT initialinterlayer deposition conditions. Series of 300nm thick films withvarying composition x have been prepared. The Ti and Zr ratio waschanged by adjusting the powers of the corresponding targets. Thelead content was self stabilized by the process at the depositiontemperature of 570 deg C. Polarization, dielectric andpiezoelectric properties were studied. Coercive field, built-inelectric field and unswitchable polarization for Ti-richcompositions have been determined by polarisation hysteresis loops.