Electrical and Physical Characteristics of Vanadium-Doped Bi_4Ti_30_(12) Ferroelectric Thin Films after Rapid Thermal Annealing

摘要

The V_2O_s-doped Bi_4Ti_30_(12) of Bi_(3.9)Ti_2.9V_(0.08)O_(12) (BTV) ceramic was used as the target, and the BTV thin films were deposited on the F_t/Ti/SiO_2/silicon substrate by radio frequency (RF) magnetron sputtering. The physical characteristics of BTV thin films were prepared under different conditions to find the optimal deposited parameters. The electrical characteristics of BTV thin films under the optimal sputtering and annealing parameters were prepared by using metal-ferroelectric-metal structure. Additionally, the remnant polarization of deposited BTV thin films would be improved by rapid thermal annealing process from our study, and 2Pr was about 40μC/cm2. Finally, the nonvolatile and non-destructive characteristics of one transistor-capacitor (1TC) structure FRAM device, using the annealed BTV films as the gate oxide, were be fabricated and discussed.