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首页> 外文期刊>Ferroelectrics >Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba_xSr_(1-x)TiO_3 Thin Films
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Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba_xSr_(1-x)TiO_3 Thin Films

机译:衬底偏压对磁控溅射Ba_xSr_(1-x)TiO_3薄膜结构和介电性能的影响

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摘要

The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of Ba_xSr_(1-x)TiO_3 thin films. As a result, the dielectric properties of Pt/Ba_xSr_(1-x)TiO_3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.
机译:射频磁控溅射过程中施加衬底偏压会改变Ba_xSr_(1-x)TiO_3薄膜的晶体结构,晶粒形态,晶格应变和组成。结果,Pt / Ba_xSr_(1-x)TiO_3 / Pt平行板电容器的介电性能发生显着变化。随着衬底偏压的增加,我们观察到铁电相变到顺电相变向高温明显转移,室温下介电常数和可调谐性增加,介电损耗恶化。这些变化在很大程度上与面内拉伸膜应变随基底偏压的逐渐增加和膜组成的突然变化有关。

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