Preparation of In_2Se_3 Thin Films by MOCVD with a New In-Se Single Source Precursor

摘要

In_2Se_3 is a binary compound,which is attracting wide attention because it can be used as an important material for polycrystalline thin film solar cell.It has various structural modifications of alpha,beta,and gamma-phase,and they have quite different electronic properties;alpha-phase of In_2Se_3 has low band gap,1.2-1.3 eV at the temperature below 200 deg C.As temperature goes up to above 200 deg C,it is transformed to beta-phase with a band gap of 1.4 eV.In addition,when temperature goes to higher temperature,350 deg C,it is converted to y-In_2Se_3 with a band gap of 1.8 eV.Particularly,gamma-In_2Se_3 is interesting since it can be adopted as a suitable absorber layer in CdS/In_2Se_3 or In_2S_3/In_2Se_3 photovoltaic cells because of its high absorption coefficient and the band gap which is in an optimum range for solar energy conversion.