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首页> 外文期刊>Bulletin of the Korean Chemical Society >Line Patterning using a Scanning Probe Lithography Technique based on Convolution Method
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Line Patterning using a Scanning Probe Lithography Technique based on Convolution Method

机译:基于卷积法的扫描探针光刻技术进行线型化

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In this article, we report the development of a fabrication process for predictable line patterns. The proposed process uses two control parameters: the tip speed and step size, with the convolution method. From the oxidation curves, we choose the two oxidation parameters: bias voltage and oxidation time. Given a desired line pattern, these oxidation parameters are then used for calculating the control parameters. The step size is determined by the width of the nanodot profile, and the tip speed is calculated using the step size and the oxidation time. As the overlapping of exposure area happens because of the nanodots located densely, the electrochemical reaction is continuously activated during the line lithography process in the overlapped area so that the amount of overlap can be estimated with the convolution method. From experimental results with a commercial atomic force microscope, we verified that our method is effective in fabricating nanoline patterns.
机译:在本文中,我们报告了可预见的线条图案制造工艺的发展。所提出的过程使用两个控制参数:叶尖速度和步长,以及卷积方法。从氧化曲线中,我们选择两个氧化参数:偏置电压和氧化时间。给定理想的线型,然后将这些氧化参数用于计算控制参数。步长由纳米点轮廓的宽度确定,尖端速度使用步长和氧化时间计算。由于由于纳米点密集而发生曝光区域的重叠,因此在线形光刻工艺期间,在重叠区域中连续激活电化学反应,从而可以通过卷积法估计重叠量。从商用原子力显微镜的实验结果来看,我们证明了我们的方法在制造纳米线图案方面是有效的。

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