首页> 外国专利> Nano probes tip for progressive scanning probe microscopy with a layer of probes material which, by means of lithography and / or by ions jet techniques is structured

Nano probes tip for progressive scanning probe microscopy with a layer of probes material which, by means of lithography and / or by ions jet techniques is structured

机译:纳米探针尖端,用于渐进式扫描探针显微镜,带有一层探针材料,该材料通过光刻和/或离子喷射技术构成

摘要

By forming a suitable material layer, for example of a metal-containing material, on a suitable substrate and patterning the layer of material, in such a way that a lever arm region and a tip area is to be provided, can be specially shaped nano probes are obtained. In some illustrative embodiments, in addition a three-dimensional templates structure before the deposition of the probes material is created, whereby the forming sophisticated extending on the basis of lithography is possible, as an alternative or in addition, other material removal processes with high spatial resolution, approximately fib - a method for forming of nano probes, can be used for the measurements with electrical interaction and high resolution temperature and the like can be used. Thus, demanding measurement techniques for measuring techniques for thermal probe, the deformation measurement and the like are arranged, in which a thermal and / or electrical interaction with the observed surface is required. These techniques can be advantageous for the fault location and local analysis during the manufacture of modern integrated circuits are used.
机译:通过在合适的基底上形成合适的材料层,例如含金属的材料,并对该材料层进行构图,使得可以提供杠杆臂区域和尖端区域,可以被特殊地成形为纳米。获得探针。在一些说明性的实施例中,另外地,在沉积探针材料之前创建三维模板结构,从而可以替代地或另外地,以高空间为基础的其他材料去除工艺来形成基于光刻的复杂的成型过程。分辨率大约为1fb-形成纳米探针的方法可以用于具有电相互作用的测量,并且可以使用高分辨率温度等。因此,布置了用于热探针的测量技术,变形测量等的苛刻的测量技术,其中需要与被观察表面的热和/或电相互作用。这些技术对于使用现代集成电路的制造过程中的故障定位和局部分析可能是有利的。

著录项

  • 公开/公告号DE102007052610A1

    专利类型

  • 公开/公告日2009-05-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20071052610

  • 发明设计人

    申请日2007-11-05

  • 分类号G12B21/02;B81C1/00;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:33

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