Reliability aspects of high temperature power MOSFETS

摘要

Gate oxide reliability and thermal shock resistance of power MOSFETs for high temperature applications, have been investigated by accelerated tests and several analytical and electrical techniques. Thermal shock tests have been performed between -40250L?and 200℃ with subsequent electrical tests and failure analysis. Time Dependent Dielectric Breakdown (TDDB) of the gate oxide has been studied in detail by means of in-situ leakage current measurements at various voltages and temperatures. A statistical analysis of the results yields information on the underlying failure time distribution, failure mechanisms and lifetime.