Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite

摘要

Fianite is a single crystal of cubic solid solutions based on zirconium dioxide (ZrO_2) or hafnium dioxide (HfO_2) with stabilizing oxides of yttrium, scandium, and lanthanides. It is characterized by a unique combination of physical and chemical properties, making it a promising material for wide use in electronics. In this work, we consider new uses of fianite as a monolith substrate for obtaining Ge, GeSi, AlGaN, and GaSb epitaxial films and GaSb/InAs superlattices.