首页> 外文期刊>Bulletin of the Russian Academy of Sciences. Physics >Studying the characteristics of the photosensitive elements of photodetector matrices based on Si Pt: Si by means of induced potential and transmission electron microscopy
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Studying the characteristics of the photosensitive elements of photodetector matrices based on Si Pt: Si by means of induced potential and transmission electron microscopy

机译:基于感应电势和透射电镜研究基于Si Pt:Si的光电探测器矩阵光敏元件的特性

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摘要

The prospects for the combined use of scanning and transmission electron microscopy in studying defects in the matrix elements of the infrared photodetectors are considered. It is shown that combining these techniques allows us to fully realize the potential of high-voltage transmission microscopy for detecting defects that impair matrix parameters.
机译:考虑了结合使用扫描电子显微镜和透射电子显微镜研究红外光电探测器矩阵元素中的缺陷的前景。结果表明,结合这些技术可以使我们充分认识到高压透射显微镜在检测损害矩阵参数的缺陷方面的潜力。

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