Reflective Interferometer for Investigation of the Amplitude—Phase Characteristics of Semiconductor Nanostructures

摘要

It is proposed to apply a reflective interferometer in measurements of the spectral dependence ofthe phase of reflection of mirrors based on multilayer semiconductor nanostructures. The interferometer hasbeen tested on the semiconductor minor initiating the self-locking mode of a Nd~(3+):KGd(WO_4)_2laser. The tech-nique proposed can be applied in a wide wavelength range and has a higher sensitivity for measuring the phasecharacteristics in comparison with the conventional two-beam interferometers.