Electromechanical characterization of au thin films using micro-tensile testing

摘要

This paper presents the test technique about measurement of electrical resistance changes of thin films during tensile testing. In this work, we used a real-time digital image correlation strain measurement system coupled with micro-tensile testing unit and voltage/current sourcemeter. This system has the advantage of real time displacement monitoring with a resolution of 50 nm during the micro-tensile testing, with the ability to measure the variation in electrical resistance of the specimen at the same time. We obtained the complete testing data for the stress-strain curve and associated electrical resistance-strain curve for 1 and 2 μm-thick freestanding gold films. Young's modulus was about 61~69 GPa and 0. 2% offset yield strength was about 361~402 MPa. In case of the electrical resistance, rapid change was observed under the elastic regime, while less obvious under the plastic regime. We also conducted finite element analysis, and this result implied that the electrical resistivity would not be constant during micro-tensile testing.