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AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties

机译:使用热电子真空电弧(TVA)生长AlGaAs膜及其物理性质

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摘要

In this research, an AlGaAs film was deposited on a microscope slide by means of the thermionic vacuum arc (TVA) technique which is a novel plasma production technique. AlGaAs structures were grown by this deposition technique for the first time and this process occurred in a very short period of time. In order to characterize the produced film, nano-structural, nano-mechanical, optical, and surface properties were determined by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD) and interferometer. According to the results of the measurements, the mean thickness value of the produced film was obtained as 1.8 mu m. The band gap value was determined as 2 eV from the Kubelka-Munk plot. The refractive index value was obtained as approximately 3.4. Hardness value was determined as 2GPa from the Oliver-Pharr method. All these values are consistent with the reported values in the literature for the AlGaAs films produced by different methods. TVA technique appeared as a suitable and promising technique for the production of AlGaAs films.
机译:在这项研究中,AlGaAs膜通过热离子真空电弧(TVA)技术沉积在显微镜载玻片上,该技术是一种新型的等离子体生产技术。 AlGaAs结构是首次通过这种沉积技术生长的,并且该过程在很短的时间内就发生了。为了表征生产的薄膜,通过场发射扫描电子显微镜(FESEM),原子力显微镜(AFM),X射线衍射仪(XRD)和干涉仪确定了纳米结构,纳米机械,光学和表面性能。根据测量结果,获得的膜的平均厚度值为1.8μm。根据Kubelka-Munk图将带隙值确定为2 eV。获得的折射率值约为3.4。硬度值通过Oliver-Pharr方法确定为2GPa。所有这些值与文献报道的通过不同方法生产的AlGaAs薄膜的值一致。 TVA技术似乎是生产AlGaAs膜的合适且有希望的技术。

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