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首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Some Physical Properties of the SiGe Thin Film Coatings by Thermionic Vacuum Arc (TVA)
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Some Physical Properties of the SiGe Thin Film Coatings by Thermionic Vacuum Arc (TVA)

机译:通过热电子真空电弧(TVA)的SiGe薄膜涂层的一些物理性质

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摘要

SiGe thin films were deposited on glass and PET substrate by the thermionic vacuum arc (TVA) method for the first time. TVA is an anodic plasma generator which works in high vacuum conditions. Highly pure and quality films can be deposited on different substrates by means of this method. In order to characterize the produced films, X-ray diffraction, field emission scanning electron microscope (FESEM), atomic force microscope (AFM), energy dispersive X-ray spectrometer (EDX), optical tensiometer, UV-Vis spectrophotometer and spectroscopic ellipsometer (SE) devices were used. The obtained XRD peaks at 47 degrees and 75 degrees are described to the reflections of (220) and (331) planes of Ge or Si. According to the measurement results, substrates materials are affect the surface and optical properties of the deposited SiGe layers. SiGe coated samples with low optical band gaps exhibit low transparency and high absorption. The structures are homogenous and less rough.
机译:SiGe薄膜首次通过热电子真空电弧(TVA)方法沉积在玻璃和PET基板上。 TVA是在高真空条件下工作的阳极等离子体发生器。通过这种方法,可以在不同的基材上沉积高纯度和高质量的薄膜。为了表征制成的薄膜,X射线衍射,场发射扫描电子显微镜(FESEM),原子力显微镜(AFM),能量色散X射线光谱仪(EDX),光学张力计,UV-Vis分光光度计和椭圆偏振光谱仪(使用SE)设备。将获得的47度和75度XRD峰描述为Ge或Si的(220)和(331)平面的反射。根据测量结果,衬底材料会影响所沉积的SiGe层的表面和光学性能。具有低光学带隙的SiGe涂层样品表现出低透明度和高吸收率。结构均匀且不粗糙。

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