Effect of the Surface State on Pulsed Laser Etching of Ultrananocrystalline Nitrogen-Doped Diamond Films

摘要

It is shown that the rate of laser oxidation of ultrananocrystalline films in the nanoablation mode is limited by the presence of physically and chemically adsorbed hydrogen-containing molecules on the surface and can be increased by preliminary thermal annealing. It is proposed to explain the observed saturation of the laser etching rate with the number of pulses by water molecule dissociation on the surface and film saturation with hydride and hydroxyl groups.