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Optical absorption studies on tin oxide films

机译:氧化锡薄膜的光学吸收研究

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Transparent electrically conducting SnO2films were prepared by the chemical vapour deposition technique. The films were deposited at substrate temperatures of 400, 450 and 500 degrees C by stannous chloride oxidation. The optical absorption studies, using unpolarised light, indicated that the deposition temperature is an important parameter influencing the optical properties of the films. The absorption edge for the films occurs at about 3.7 eV. The films also indicated direct transitions at about 3.95 eV and indirect transitions at about 3.27 eV.
机译:采用化学气相沉积技术制备了透明导电SnO2薄膜。薄膜在400、450和500°C的基底温度下通过氯化亚锡氧化沉积。使用非偏振光的光学吸收研究表明,沉积温度是影响薄膜光学性能的重要参数。薄膜的吸收边缘出现在约3.7 eV处。这些薄膜还显示出约3.95 eV的直接跃迁和约3.27 eV的间接跃迁。

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