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首页> 外文期刊>European journal of inorganic chemistry >Heterometallic, hybrid, heavy main-group iodometallates containing lanthanide complexes: Template synthesis, structures, thermal, optical, luminescent and magnetic properties
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Heterometallic, hybrid, heavy main-group iodometallates containing lanthanide complexes: Template synthesis, structures, thermal, optical, luminescent and magnetic properties

机译:含镧系元素配合物的杂金属杂合重金属碘化物:模板合成,结构,热,光学,发光和磁性

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Using [Ln(L)_8] ~(3+) [Ln = Tb, Y; L = dimethyl sulfoxide (DMSO), N,N-dimethylformamide (DMF)] cations as templating reagents, the syntheses and crystal structures of the following new metal organic-inorganic hybrid complexes based on either discrete clusters or 1D chains of an iodoplumbate or-bismuthate moiety are reported: [Tb(DMSO) _8] _2[(DMSO) _2Pb _5I _(16)] (1), [Tb(DMF) _8][Pb _3I _9] 1∞·DMF (2) and [Ln(DMF) _8][Bi _2I _9] [Ln = Y (3), Tb (4)]. These derivatives were characterized by thermogravimetric analysis (TGA), diffuse-reflectance spectroscopy, luminescence spectroscopy and magnetic studies. TGA studies show that the thermal stability of these complexes decreases in the order 2 > 3 ≈ 4 > 1. An optical band-gap in the range 1.90-2.15 eV in the diffuse-reflectance spectra of 1-4 indicate their potential use as semiconductors, 3 and 4 being the most promising because of their low band gap values. Compared to the precursors [Tb(DMSO) _8]I _3 and [Tb(DMF) _8]I _3, the high energy transitions in the excitation spectra of 1, 2 and 4 are quenched by a process that is best attributed to the autoionization of the carriers in the material. The temperature dependence of the magnetic susceptibilities of 1, 2 and 4 was reproduced well by a Curie-Weiss plot at 2-300 K.
机译:使用[Ln(L)_8]〜(3+)[Ln = Tb,Y; L =二甲基亚砜(DMSO),N,N-二甲基甲酰胺(DMF)]阳离子作为模板试剂,基于碘代铅酸盐或-的离散簇或一维链的以下新型金属有机-无机杂化复合物的合成和晶体结构报告了铋酸盐部分:[Tb(DMSO)_8] _2 [(DMSO)_2Pb _5I _(16)](1),[Tb(DMF)_8] [Pb _3I _9]1∞·DMF(2)和[Ln (DMF)_8] [Bi _2I _9] [Ln = Y(3),Tb(4)]。这些衍生物通过热重分析(TGA),漫反射光谱,发光光谱和磁性研究进行了表征。 TGA研究表明,这些配合物的热稳定性按2> 3≈4> 1的顺序降低。在1-4的漫反射光谱中,光学带隙在1.90-2.15 eV范围内,表明它们潜在地用作半导体,由于带隙值低,3和4是最有前途的。与前体[Tb(DMSO)_8] I _3和[Tb(DMF)_8] I _3相比,在激发光谱1、2和4中的高能跃迁通过最能归因于自电离的过程淬灭材料中的载体。磁化率1、2和4的温度依赖性通过2-300 K的居里-魏斯图很好地再现。

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