Preparation of Al-Sb semiconductor by swift heavy ion irradiation

摘要

Al-Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10~(-5) torr. These films were irradiated by Ag~(12+) heavy ions of energy, 160 MeV, with a fluence of 2.2 X 10~(13) ions/cm~2, to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.