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Synthesis of PbTe nanocubes, worm-like structures and nanoparticles by simple thermal evaporation method

机译:简单热蒸发法合成PbTe纳米立方,蠕虫状结构和纳米粒子

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Nanocrystalline PbTe thin films are prepared by thermal evaporation on glass substrates. The investigations of X-ray diffractograms have shown that the structure of film is found to possess stable face centred cubic (fcc) phase in which the grains predominantly grow in the direction of (200) plane. The grain size of the films is within the range of 27-43 nm. Morphologies like assembly of nanoparticles, worm-like structures and nanocubes were prepared by tuning the film thickness. Electrical resistivity is measured using four-probe technique and its thickness dependence has been analysed on the basis of 'effective mean free path model'. A change in conductivity from n-type to p-type is observed due to the increase of migration of tellurium vacancies in the films with temperature. Bandgap energy of the PbTe nanocrystalline thin films suffered a large blue shift of about 1-299 eV due to quantum confinement of charge carriers. The nanocrystalline PbTe thin films of different morphologies such as nanoparticles, worm-like and nanocubes have the optical bandgap energies of 1-61,1-23 and 1-01 eV, respectively. Photoconductivity measurement shows that the prepared nanocrystalline PbTe thin films of different morphology exhibits good response. This structure induced change in optical properties may have potential applications in optoelectronics devices.
机译:通过在玻璃基板上热蒸发制备纳米晶态的PbTe薄膜。 X射线衍射图的研究表明,发现膜的结构具有稳定的面心立方(fcc)相,其中晶粒主要在(200)面方向上生长。膜的晶粒尺寸在27-43nm的范围内。通过调节膜的厚度,制备了诸如纳米颗粒组装,蠕虫状结构和纳米立方体之类的形态。使用四探针技术测量电阻率,并在“有效平均自由程模型”的基础上分析了其厚度依赖性。由于薄膜中碲空位迁移随温度的增加,观察到电导率从n型变为p型。由于电荷载流子的量子限制,PbTe纳米晶体薄膜的带隙能量发生了大约1-299 eV的大蓝移。不同形态的纳米晶PbTe薄膜,例如纳米粒子,蠕虫状和纳米立方体,其光学带隙能量分别为1-61、1-23和1-01 eV。光电导测量表明,所制备的不同形态的纳米晶PbTe薄膜表现出良好的响应。这种结构引起的光学特性变化可能在光电器件中具有潜在的应用。

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