AbstractElectron beam induced current imaging has been used to monitor the dynamic changes of the metal–semiconductor interface of AuGeNi/n‐GaAs during annealing at 300°C. The reacted interface was then revealed by argon ion etching of the metal overlayer, and analyzed by secondary electron and Auger electron imaging. The combined EBIC–Auger imaging of the reacted interface indicates that the formation of the ohmic contact starts at localized areas where small Ni‐ and As‐rich grains are formed. The results also show that this combined EBIC–Auger imaging technique is particularly suitable for investigating the mechanism of degradation of Schot
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