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首页> 外文期刊>Bulletin of Materials Science >A new crystal structure for (BEDT-TTF)_2SbF_6 and some of its physical properties
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A new crystal structure for (BEDT-TTF)_2SbF_6 and some of its physical properties

机译:(BEDT-TTF)_2SbF_6的新晶体结构及其一些物理性质

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摘要

A new crystal structure for bis(ethylenedithio)tetrathiafulvalene [(BEDT-TTF)_2 SbF_6] was determined by single crystal X-ray diffraction. The crystal structure was refined in the P 1 space group at room temperature. Crystal data for new structure are as follows: triclinic, a = 8.670 (2) A,b = 8-664 (2) A, c = 16.842 (5) A, alpha = 89 deg center dot 29 (2), beta= 90deg center dot 71 (3), gamma = 92 deg center dot 67 (1), V = 1263.64 A~3, Z = 2, D_x = 2.136 g cm~(-3), (Mo-K alpha), gamma = 0-7107 A, R = 0057 for a total of 5517 independent reflections. The donors form a trimerized column, and the band structure calculated by the tight-binding approximation shows band insulator properties. The temperature dependent of the d.c. resistivity shows a semiconducting behaviour with room temperature resistivity along the c-axis; rho_(290 K) = 5.6 ohm cm.
机译:通过单晶X射线衍射确定了双(亚乙基二硫代)四硫富瓦烯[(BEDT-TTF)_2 SbF_6]的新晶体结构。在室温下,在P 1空间群中细化晶体结构。新结构的晶体数据如下:三斜晶,a = 8.670(2)A,b = 8-664(2)A,c = 16.842(5)A,alpha = 89度中心点29(2),beta = 90度中心点71(3),γ= 92度中心点67(1),V = 1263.64 A〜3,Z = 2,D_x = 2.136 g cm〜(-3),(Mo-K alpha),gamma = 0-7107 A,R = 0057,共有5517个独立反射。供体形成三聚体柱,通过紧密结合近似计算出的能带结构显示出能带绝缘体的性质。温度取决于直流电电阻率表现出半导体行为,其中室温电阻率沿c轴; rho_(290 K)= 5.6欧姆·厘米。

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