Electrical characterization of low temperature deposited oxide films on ZnO-Si substrate

摘要

Thin films of silicon dioxide are deposited on ZnO-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (Q_(bt)) and fixed oxide charge density (Q_f/q) of the SiO_2/ZnO-Si films are found to be 3.9 X 10~(10) cm~(-2) and 1.048 X 10~(11) cm~(-2), respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler-Nordheim (F-N) constant current stressing.