Growing multiple layers of porous semiconductors -A molecular-dynamics study

摘要

The deposition of Si/Ge multilayers was simulated using classical molecular-dynamics simulations. The layers consisted of 40 Ge or Si clusters of 1018 atoms deposited at 1 eV/atom on a porous Ge layer previously deposited onto a Si bulk lattice. These multilayers were numerically analyzed, and simulated transmission electron microscope images of the layers were formed. The results showed that the porous Ge layers were capable of supporting the deposition without collapsing, thus forming multiple superimposed layers with different characteristics. The image simulations suggest that identification of elements within the new layers is possible through contrast analysis.