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首页> 外文期刊>Electrochimica Acta >Surface-oxide growth at platinum electrodes in aqueous H{sub}2SO{sub}4 Reexamination of its mechanism through combined cyclic-voltammetry, electrochemical quartz-crystal nanobalance, and Auger electron spectroscopy measurements
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Surface-oxide growth at platinum electrodes in aqueous H{sub}2SO{sub}4 Reexamination of its mechanism through combined cyclic-voltammetry, electrochemical quartz-crystal nanobalance, and Auger electron spectroscopy measurements

机译:在H {sub} 2SO {sub} 4水溶液中铂电极上表面氧化物的生长通过组合循环伏安法,电化学石英晶体纳米天平和俄歇电子能谱测量重新检验其机理

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The mechanism of platinum surface electro-oxidation is examined by combined cyclic-voltammetry (CV), in situ electrochemical quartz-crystal nanobalance (EQCN) and ex situ Auger electron spectroscopy (AES) measurements. The CV, EQCN and AES data show that the charge density, interfacial mass variation and intensity of the O-to-Pt AES signal ratio increase in a continuous, almost linear manner as the potential is raised from 0.85 to 1.40V. In addition, the charge density, mass variation and O-to-Pt signal ratio profiles follow each other, thus indicating that the surface oxidation proceeds by a progressive coordination of O-containing species to the Pt substrate. The coupled CV and EQCN measurements lead to in situ determination of the molecular weight of the interfacial species; these were identified as chemisorbed O (O{sub}(chem)) at 0.85 ≤ E ≤ 1.10 V and as O{sup}(2-) in the form of a surface PtO at 1.20 ≤ E ≤ 1.40V. The AES results reveal that the first half-monolayer of O{sub}(chem) is formed through discharge of H{sub}2O molecules and such formed O{sub}(chem) resides on the Pt surface. Subsequent discharge of H{sub}2O molecules leads to formation of the second half-monolayer of O{sub}(chem) that is accompanied by the interfacial place exchange of O{sub}(chem) and surface Pt atoms; this process results in the development of a quasi-3D surface PtO lattice comprising Pt{sup}(2+) and O{sup}(2-). AES data demonstrate that the place-exchange process occurs in the 1.10-1.20 V potential range. The experimentally determined molecular weight of the species added to the surface is 15.8 g mol{sup}(-1), which points to O and to anhydrous PtO as the surface oxide formed.
机译:通过组合循环伏安法(CV),原位电化学石英晶体纳米天平(EQCN)和非原位俄歇电子能谱(AES)测量来检查铂表面电氧化的机理。 CV,EQCN和AES数据表明,随着电势从0.85V升高到1.45V,O-Pt AES信号比的电荷密度,界面质量变化和强度将以连续,几乎线性的方式增加。此外,电荷密度,质量变化和O-Pt信号比率分布图相互跟随,因此表明表面氧化是通过将含O的物质与Pt基板逐步配位而进行的。耦合的CV和EQCN测量结果可以就地确定界面物种的分子量。它们被确定为在0.85≤E≤1.10 V时化学吸附的O(O {sub}(chem)),并在1.20≤E≤1.40V时以表面PtO的形式被标识为O {sup}(2-)。 AES结果表明,O {sub}(chem)的前半单层是通过H {sub} 2O分子的放电形成的,并且这种形成的O {sub}(chem)位于Pt表面上。 H {sub} 2O分子的后续放电​​导致O {sub}(chem)的第二个半单分子层的形成,伴随着O {sub}(chem)与表面Pt原子的界面交换。该过程导致了包括Pt {sup}(2+)和O {sup}(2-)的准3D表面PtO晶格的发展。 AES数据表明,位置交换过程发生在1.10-1.20 V的电位范围内。根据实验确定,添加到表面的物质的分子量为15.8 g mol {sup}(-1),这表示O和作为形成的表面氧化物的无水PtO。

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