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Rapid Galvanostatic Determination on Levelers for Superfilling in Cu Electroplating

机译:电镀铜中填充剂的快速恒流测定

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4-Amino-2,1,3-benzothiadiazole and 6-aminobenzo-thiazole were studied as potential levelers for Cu plating in submicrometer trenches. We conducted galvanostatic measurements on rotating disk electrodes at various concentrations and recorded their respective voltages at 200 and 430 rpm. A profile of voltage difference between them at various concentrations revealed a volcano curve in which superfilling was expected to occur for 4-amino-2,1,3-benzothiadiazole but not for 6-aminobenzo-thiazole. Direct scanning electron microscopy observations on the plated Cu confirmed predictions from the volcano curves. A diffusion– adsorption mechanism was proposed for these two compounds to explain their leveling abilities on Cu superfilling.
机译:研究了4-氨基-2,1,3-苯并噻二唑和6-氨基苯并噻唑作为亚微米沟槽中镀铜的潜在找平剂。我们在各种浓度的旋转圆盘电极上进行了恒电流测量,并分别记录了它们在200和430 rpm时的电压。它们在不同浓度下的电压差曲线揭示了一条火山曲线,其中4-氨基-2,1,3-苯并噻二唑预计会发生超填充,而6-氨基苯并噻唑则不会发生。对镀铜的直接扫描电子显微镜观察证实了火山曲线的预测。提出了这两种化合物的扩散吸附机制,以解释它们在铜超填充时的流平能力。

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