Green Light-Emitting Diodes with a Photoelectrochemically Treated Microhole-Array Pattern

摘要

Green InGaN-based light-emitting diodes LEDs with roughened microhole-array MHA structures were fabricated through a dry etching process and a photoelectrochemical PEC process. The PEC process consisted of a bandgap-selective lateral etching process at the InGaN active layer, an N-face bottom-up crystallographic etching process at the bottom p-type GaN:Mg layer, and a PEC oxidation process at the n-type GaN:Si surface. The light output power of the MHA-LED and the photoelectrochemically treated microhole-array light-emitting diode PMHA-LED had 7 and 65% enhancement, respectively, compared to a conventional LED at a 20 mA operation current