首页> 美国政府科技报告 >Analysis of the Far-Field Radiation Pattern of the Ultraviolet Light-Emitting Diode (LED) Engin LZ4-00UA00 Diode with and without Beam Shaping Optics.
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Analysis of the Far-Field Radiation Pattern of the Ultraviolet Light-Emitting Diode (LED) Engin LZ4-00UA00 Diode with and without Beam Shaping Optics.

机译:具有和不具有光束整形光学的紫外发光二极管(LED)Engin LZ4-00Ua00二极管的远场辐射图分析。

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This report describes the measurements of the far-field radiation pattern of a LED Engin LZ4-00UA00 10-W ultraviolet (UV) light-emitting diode (LED), with and without beam shaping optics. This LED has 4 emitters arranged in a square pattern that are off-center from the optical axis of the LED internal lens. These measurements were made to compare the far-field spatial projection of LED light, specified by the lens manufacturer, with measurements. This analysis found that the far field illumination of the LED itself is not spatially flat, but does not decrease by more than 50% across the 50 deg by 38 deg field of measurement used in this analysis. The lens transmits only 20% of the UV LED's peak power and its far-field radiation pattern is about 44 deg by 25 deg, the outer boundaries of this region being 50% of the maximum value. Transmission improvements using other polycarbonate material are discussed.

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