Thermal stability of hydrogen-doped zinc-oxide thin-films

摘要

We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10~(-3)ω-cm with a 10 H_2Ar flow ratio. The increase in the H_2Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional H_o in the ZnO:H films. The resistivity of the ZnO:H film with 50 H_2Ar flow ratio can be reduced from 3.49 × 10 ~(-3)ω-cm to 2.35 × 10~(-3)ω-cm after heat treatment to 300°C.