A New Approach for the Study of Chemical Mechanical Polishing

摘要

The process of chemical mechanical polishing (CMP) can be studied using in situ atomic force microscopy (AFM) by intentionally using a high tip/sample interaction force. The nominal removal rate of Al during AFM scratching is studied under a range of conditions including varying tip.sample force, solution pH, and electrode potential. This approach should be useful for CMP process development and furthering the fundamental understanding of CMP mechanisms.