Investigation of GeTe/Ge_2Sb_2Te_5 nanocomposite multilayer films for phase-change memory applications

摘要

Crystallization temperature of GeTe/Ge_2Sb_2Te _5 nanocomposite multilayer films can be tuned by adjusting the thickness ratio of GeTe to Ge_2Sb_2Te_5. Phase-change memory devices with GeTe/Ge_2Sb_2Te_5 multilayer films exhibited relatively lower RESET voltages as compared to a device with pure Ge_2Sb_2Te_5, which will promise a low programming power of a phase-change memory device. The reduced programming voltage may be due to the reduction in thermal conductivity.The cycle endurance of memory cells up to 1.8 105 cycles with a resistance ratio more than 100 has been achieved. Our experiments indicate that GeTe/Ge _2Sb_2Te_5 nanocomposite multilayer films are promising candidate for phase-change memory applications.