AlooPbZr0.53Ti0.47…O3/Polycrystalline Silicon/Insulator Y2O3…oSi Field Effect Transistors for Nonvolatile Memory Applications

摘要

In this work, Al/PbZr0.53Ti0.47O3+-polycrystalline silicon/Y2O3/Si capacitors and field-effect transistors were fabricated. The n+-polycrystalline silicon floating gate was used to reduce the depolarization field of the ferroelectric layer. The gate leakage was reduced 1.68 1010 A/cm2 at 5 V due to the large electron barrier height at the Y2O3/Si interface. The ratio Ac/Af of the control gate area Ac and the floating gate area Af was varied from 1 to 0.25. An IDS-VGS memory window of 2.97 V was obtained at a sweeping voltage of 9 V with an Ac/Af ratio of 0.25. An Ac/Af area ratio less than 1 was preferred.