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Suppressor Effects during Copper Superfilling of Sub-100 nm Lines

机译:100 nm以下线的铜填充过程中的抑制效应

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摘要

The effects of suppressor and accelerator on the superfilling of copper are studied for two commercial chemistries. The potential transients during galvanostatic plating were obtained for injections of the industrially recommended dose of accelerator and various doses of suppressor. The potential increase immediately after the injection was found to be strongly dependent on the type of suppressor as well as the amount of suppressor injected. While the transient of the full dose of suppressor represents what happens at the mouth of the feature and the field outside the feature, the bottom of the feature can be simulated by the case in which a fraction of suppressor is injected. The filling results in sub-100 nm lines are well correlated with the differences observed in the potential transients.
机译:研究了两种商业化学中抑制剂和促进剂对铜超填充的影响。通过注入工业推荐剂量的促进剂和各种剂量的抑制剂,可获得恒电流电镀过程中的潜在瞬变。发现在注射后立即增加电位,这在很大程度上取决于抑制剂的类型以及所注射抑制剂的量。虽然全剂量抑制器的瞬变表示在特征的嘴部和特征外部的场处发生的情况,但是可以通过注入一部分抑制器的情况来模拟特征的底部。 100 nm以下线的填充结果与潜在瞬态中观察到的差异具有良好的相关性。

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