Epitaxial Growth of CoSi_2 on Si Using a CoN_x Interlayer Deposited by Reactive Metallorganic Chemical Vapor Deposition

摘要

A CoN_x film has been introduced as a new interlayer material for the epitaxal growth of CoSi_2 on Si. The by metallorganic chemical vapor deposition using a cobalt carbonyl source in NH_3 ambient Rom the uniform and ultrathin epitaxial CoSi_2 layer with the thickness of 15 nm has been obtained.During the CoN_x deposition, a SiN/cobalt silicide double layer has been observed at the interface. It is believed that the SiN layer limits the supply of Co to Si, resulting in allowing the growth of the CoSi_2 epitaxial layer.