One-Step Electrodeposition of ZnO_2-ZnS Thin-Film Mixtures onto n-InP(111) and n-InP(100ubstrates

摘要

Electrodeposition of ZnS-ZnO_2 film mixtures onto monocrystalline n-InP substrates through the simultaneous electroreduction of dioxygen and sulfur in the presence of zinc ions in dimethyl sulfoxide solution is reported. The films were thick, compact, transparent, and with a flat morphology. The mixture of phases was confirmed by the analysis of the reflection high-energy electron diffraction patterns. The optical absorption gave an E_g value of 3.47 eV, which agrees with the presence of ZnO in the mixture. The properties of the films suggest it might be a good alternative to replace the CdS window layer in Cu(In,Ga)Se_2-based photovoltaic devices.