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Control of the Dynamics of Photogenerated Carriers at the Boron-Doped Diamond/Electrolyte Interface by Variation of the Surface Termination

机译:通过改变表面末端来控制掺硼金刚石/电解质界面上光生载流子的动力学

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摘要

The photoelectrochemical response of boron-doped diamond electrode/electrolyte interfaces was examined toestablish the influence of the chemical termination at thediamond surface on the dynamics of photogenerated carriers.Photocurrent transients resulting from pulsed excimer laserirradiation at hydrogen-terminated (as-deposited) diamondelectrodes and at oxygen-terminated electrodes, which wereprepared either by exposing the surface to oxygen plasma or byanodic polarization in an electrolyte solution, were compared. Asignificant difference between the photocarrier dynamics forthese two surfaces was observed in terms of the full width athalf-maximum of the photocurrent transients. The much fasterdecay rate that was observed for the oxygen-terminated surface isattributed to either the depassivation of deep trapping sites due toremoval of subsurface hydrogen or to the introduction of defectrecombination sites by the oxygen plasma.
机译:研究了掺硼金刚石电极/电解质界面的光电化学反应,以建立金刚石表面化学终止对光生载流子动力学的影响。在受氢限制的(沉积的)金刚石电极上和在室温下,脉冲受激准分子激光辐照产生的光电流瞬变。比较了通过将表面暴露于氧等离子体或在电解液中通过阳极极化制备的氧封端电极。观察到两个表面之间的光载流子动力学之间的显着差异,就光电流瞬变的全宽而言,最大是最大。氧终止表面观察到的更快的衰减速率归因于由于去除了地下氢而引起的深捕获位的钝化或由氧等离子体引入的缺陷重组位。

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